InGaAs PDInGaAs Photodiode
全磊晶結構(as grown p/i/n epi structure) InGaAs PIN，以取代傳統Zn diffusion n/i/n 結構。在高速應用領域可以提升元件junction 深度的準確性，提升產品特性的一致性，良率。並調整濕蝕刻配方以降低暗電流，或輔以後磊晶(over growth)披覆蝕刻側壁來降低暗電流。
-
As grown p/i/n epi structure InGaAs P-I-N photodetector (PD) offered in die/array form for up to 25Gb/s telecommunication applications.
-
AR coating optimized for 1550/1310nm applications.
-
Excellent low dark current and capacitance.
-
30µm optical detection mesa area.
